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SA1921 satellite and cellular dual-band rf front-end product specification supersedes data of 1998 sep 11 ic17 data handbook 1999 mar 02 integrated circuits
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 2 1999 mar 02 8532121 20917 description the SA1921 is an integrated dual-band rf front-end that operates at both cellular (amps, damps, and gsm) and satellite (15151600 mhz) frequencies, and is designed in a 13 ghz f t bicmos processequbic1. the low-band is a combined low-noise amplifier (lna) and mixer. the lna has a 1.7 db noise figure at 943 mhz with 18.3 db of gain and an iip3 of 5 dbm. the wide-dynamic range mixer has a 11 db noise figure at 943 mhz with 7.2 db of gain and an iip3 of +5 dbm. the high-band contains a receiver front-end, and a high frequency transmit mixer intended for closed loop transmitters. one advantage of the high-band architecture is an image-rejection mixer with over 30 db of image rejection; thus, eliminating external filter cost while saving board space. the system noise figure is 3.9 db at 1550 mhz with a power gain of 22.2 db and an iip3 of 11.5 db. features ? low current consumption ? outstanding low- and high-band noise figure ? excellent gain stability versus temperature and supply ? image reject high-band mixer with over 30 db of rejection ? increased low-band lna gain compression during analog transmission ? lo input and output buffers ? on chip logic for network selection and power down ? very small outline package applications ? 800 to 1000 mhz analog and digital receivers ? 1515 to 1600 mhz digital receivers ? portable radios ? digital mobile communications equipment pin configuration gnd sr01732 21 22 23 24 25 26 27 28 29 30 31 37 38 39 40 41 42 43 1 2 3 4 5 6 18 19 20 7 8 9 10 11 12 44 45 46 47 48 32 33 34 35 36 15 16 17 13 14 tx on v high band image set i high band lo input gnd gnd low band lo input gnd high band image set q n/c gnd n/c gnd mix in gnd tx if a n/c rx on low band lo a low band lo a high band lo b high band lo a gnd low band if b low band if a high band if b high band if a syn on hi/lo n/c gnd strong signal gnd high band lna in low band lna in gnd low band lna out n/c cc v cc v cc gnd tx if b gnd tx a tx b gnd v cc figure 1. pin configuration ordering information type number package name description version SA1921 lqfp48 plastic low profile quad flat package; 48 leads; body 7x7x1.4 mm sot313-2
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 3 pin descriptions pin no. pin name description 1 n/c no connection 2 tx if a transmit if a 3 tx if b transmit if b 4 gnd ground 5 mix in low band mixer input 6 gnd ground 7 v cc v cc 8 gnd ground 9 tx a transmit signal a 10 tx b transmit signal b 11 gnd ground 12 n/c no connection 13 hi/lo high band/low band control 14 syn on lo buffer power control 15 high band if a high band if a 16 high band if b high band if b 17 low band if a low band if a 18 low band if b low band if b 19 gnd ground 20 high band lo a high band lo output 21 high band lo b high band lo output 22 low band lo a low band lo output 23 low band lo b low band lo output 24 rx on lna/mixer power control 25 v cc v cc 26 tx on tx mixer/driver power 27 v cc v cc 28 high band image set i high band image set i 29 gnd ground 30 high band lo input high band lo connection 31 low band lo input low band lo connection 32 gnd ground 33 high band image set q high band image set q 34 gnd ground 35 gnd ground 36 n/c no connection 37 n/c no connection 38 strong signal strong signal detection 39 gnd ground 40 v cc v cc 41 gnd ground 42 high band lna in high band lna input 43 low band lna in low band lna input 44 gnd ground 45 low band lna out low band lna output 46 gnd ground 47 gnd ground 48 n/c no connection
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 4 image reject mixer gnd n/c mix in n/c rx on low band lo b low band lo a high band lo b high band lo a gnd low band if b low band if a high band if b high band if a syn on hi/lo n/c gnd strong signal gnd high band lna in lna out gnd n/c tx on v high band lo input gnd low band lo input gnd high band image set i gnd high band image set q n/c gnd cc v cc low band lna in sr01733 tx b tx a gnd v cc tx if b tx if a v cc gnd gnd gnd gnd 5 pf 5 pf figure 2. block diagram
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 5 table 1. power down control lo buffer lna mixer t x mixer driver control state (hi/lo, syn on, rx on, tx on, strong signal) high band low band high band low band high band low band high band low band x000x sleep off off off off off off off off 01000 low-band lo buffer on off on off off off off off off 01100 low-band receive normal off on off on off on off off 01101 low-band receive strong signal off on off off off on off off 01110 low-band transmit (analog only) off on off on high bias off on off on 01010 n/a off on off off off off off on 11000 high-band lo buffer on on off off off off off off off 11100 high-band receive normal on off on off on off off off 11101 high-band receive strong signal on off off off on off off off 11010 n/a on off off off off off on off note: 1. a0o is low logic state; a1o is high logic state.
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 6 operation the low-band contains both an lna and mixer that is designed to operate in the 800 to 1000 mhz frequency range. the high-band contains an lna and image-rejection mixer that is designed to operate in the 1515 to 1600 mhz frequency range with over 30 db of rejection over an intermediate frequency (if) range from 150 to 185 mhz. image rejection is achieved in the internal architecture by two rf mixers in quadrature and two all-pass filters in the i and q if channels that phase shift the if by 45 and 135 , respectively. the two phase shifted ifs are recombined and buffered to produce the if output signal. the lo section consists of an internal phase shifter to provide quadrature lo signals to the receive mixers. the filters outputs are buffered before being fed to the receive mixers. the transmit mixer section consists of a low-noise amplifier, and a down-convert mixer. in the transmit mode, an internal lo buffer is used to drive the transmit if down-convert mixer. low-band receive section the circuit contains a lna followed by a wide-band mixer. in a typical application circuit, the lna output uses an external pull-up inductor to v cc and is ac coupled. the mixer if outputs are differential. a typical application will load the output buffer with an inductor across the if outputs, a pull-up inductor to v cc and an ac coupled capacitor to the matching network. low-band receive section (analog transmit mode) the bias current of the low-band lna will increase during analog transmission, which increases its gain compression point and makes the receiver less sensitive to pa leakage power for an amps application. high-band receive section the circuit contains an lna followed by two high dynamic range mixers. these are gilbert cell mixers; the internal architecture is fully differential. the lo is shifted in phase by 45 and 135 and mixes the amplified rf signal to create i and q channels. the two i and q channels are buffered, phase shifted by 45 and 135 , respectively, amplified and recombined internally to realize the image rejection. the if output is differential and of the open-collector type. a typical application will load the output buffer with an inductor across the if outputs, a pull-up inductor to v cc and an ac coupled capacitor to the matching network. control logic section pins hi/lo, syn on, rx on, tx on, strong signal, control the logic functions. the hi/lo mode selects between low-band and high-band operation. the syn on mode enables the lo buffers independent of the other circuitry. when syn on is high, all internal buffers in the lo path of the circuit are turned on, thus minimizing lo pulling when the remainder of the receive or transmit chain is powered-up. the rx on mode enables the lo buffers when the device is in the low-band receive normal, receive strong signal and transmit modes; the rx on mode enables the lo buffers, also, when the device is in the high-band receive normal, and receive strong signal modes. the tx on mode enables the transmit mixer. the strong signal mode, when disabled, allows the low- and high-band lnas to function normally; and when the strong signal mode is enabled, it turns-off the low- and high-band lnas. this is needed when the input signal is large and needs to be attenuated. local oscillator (lo) section the lo input directly drives the two internal all-pass networks to provide quadrature lo to the receive mixers. a synthesizer-on (syn on) mode is used to power-up all lo input buffers, thus minimizing the pulling effect on the external vco when entering receive or transmit mode. transmit mixer section the transmit mixer is used for down-conversion to the transmit if. its inputs are coupled to the transmit rf which is down-converted to a modulated transmit if frequency, and phase-locked with the baseband modulation. the if outputs are high impedance (open-collector type). a typical application will load the output buffer with an inductor across the if outputs, a pull-up inductor to v cc and ac coupled capacitors to the matching network.
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 7 absolute maximum ratings symbol parameters value unit v cc input supply voltage at pins: 7, 25, 27, 40 4.75 v p d power dissipation 150 mw p in input power at all ports +20 dbm t srg storage temperature range 65 to +125 c recommended operating conditions symbol parameters rating unit v cc dc supply voltage 3.6 to 3.9 v t o operating temperature range (pin temp) 40 to +85 c dc electrical characteristics unless otherwise specified, all input/output ports are single-ended. dc parameters v cc = +3.75 v, t a = +25 c unless otherwise noted symbol parameters condition min. typ. max. unit i cc current consumption: sleep mode x000x 1.0 25 a i cc low band receive normal 01100 9.8 12.2 14.7 ma i cc low band receive strong 01101 9.0 ma i cc low band transmit (analog) 01111 18.0 ma i cc low band transmit (gsm) 01010 16.5 ma i cc high band receive normal 11100 32.0 40.0 48.0 ma i cc high band receive strong 11101 36.0 ma i cc high band transmit (gsm) 11010 19.4 ma logic low input 0 0.5 v logic high input 1.9 4.0 v
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 8 ac electrical characteristics low-band, dual mode of operation v cc = +3.75 v, freq rf = 943 mhz, freq lo = 1106 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. parameters min 3 typ +3 max units notes system rf input frequency range 869 943 960 mhz if frequency 163 mhz lo frequency 1032 1106 1123 mhz cascaded power gain; includes 3db filter loss 21.4 22.5 23.6 db power gain reduction (strong signal modeelna off) 30 36 42 db cascaded noise figure; includes 3db filter loss 2.6 db lna lna gain 17.6 18.3 19 db lna iip3 (60 khz spacing) 6.0 5.0 4.0 dbm lna iip3 (200 khz spacing) 3.0 dbm lna noise figure 1.6 1.7 1.8 db lna 1 db rf input compression point 21.0 dbm mixer mixer gain 6.9 7.2 7.5 db mixer iip3 (60 khz spacing) 4.0 5.0 6.0 dbm mixer noise figure 10.4 11.0 11.6 db mixer 1 db rf input compression point 13.0 dbm other input impedance, rf port 50 return loss at lna inputs and output 10 db 1 return loss at mixer input and outputs 10 db 1 lo leakage at rf port 42 dbm lo input power 5 3 1 dbm turn on/off time 100 sec low-band lo buffer v cc = +3.75 v, freq lo = 1106 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. parameters min 3 typ. +3 max units notes lo frequency 1032 1106 1123 mhz differential output power 7 dbm differential output impedance 100 harmonic content 20 dbc input power 5 3 1 dbm input impedance 50 1 turn on/off time 10 sec note: 1. external matching network is required.
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 9 ac electrical characteristics high-band, single mode of operation lna and image reject mixer v cc = +3.75 v, freq rf = 1550 mhz, freq lo = 1713 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. parameters min 3 typ. +3 max units notes rf input frequency range 1515 1600 mhz if frequency 150 163 185 mhz lo frequency 1665 1785 mhz power gain 21.5 22.2 22.9 db power gain reduction (strong signal modeelna off) 34 47 60 db noise figure 3.7 3.9 4.1 db input impedance, rf port 50 return loss at inputs 10 db 1 lo leakage at rf port 48 dbm 1 db rf input compression point 24 dbm ip3 (3 rd order intermodulation product) referred to the rf input port 14 11.5 9 dbm (2 x lo) (2 x rf) spur performance 50 dbm in referred to rf in p ut port 62 dbc 50 dbm in referred to rf in ut port measure at lo = 1688 mhz and rf = 1606 mhz (3 x lo) (3 x rf) spur performance. 50 dbm in referred to rf input port. measure at lo = 1688 mhz and rf = 1634 mhz. 102 dbc image rejection, f rx +2f if referred to the rf input port 31.5 34 36.5 db lo input power 5 3 1 dbm turn on/off time 10 sec high-band lo buffer v cc = +3.75 v, freq lo = 1713 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. parameters min 3 typ. +3 max units notes lo frequency range 1665 1785 mhz differential output power 9 dbm differential output impedance 100 harmonic content 20 dbc input power 5 3 1 dbm input impedance 50 1 turn on/off time 10 sec note: 1. external matching network is required.
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 10 transmit mixer v cc = +3.75 v, freq rf = 1550 mhz, freq lo = 1713 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. parameters min 3 typ. +3 max units notes t x mixer input frequency 824 1661 mhz t x rf input impedance, balanced 200 t x mixer output frequency 70 163 200 mhz t x if load impedance 1000 maximum t x if load capacitance 2 pf conversion power gain 17 18 19 db 1 1 db input compression point 17 dbm iip2 20 dbm iip3 9 7 5 dbm noise figure (double sideband) 8.5 db reverse isolation t xin lo in 40 db isolation lo in t xin 40 db notes: 1. input and output ports matched to 50 .
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 11 sr01802 r27 at4 j112 j14 j24 j25 j65 j132 j133 j124 j115 j153 j203 j213 j162 dut16 dut17 dut18 dut19 dut20 dut21 dut22 dut23 dut24 dut1 dut2 dut3 dut4 dut6 dut5 dut7 dut8 dut11 dut12 dut9 dut10 dut13 dut14 dut15 hbloa hblob lbloa hbifa hbifb lbifa lbifb gnd n/c txifa txifb gnd gnd lbmin vcc gnd gnd n/c txa txb hilo synon lblob rxon 2x r1 3.92k c23 10 pf l2 150 nh a b c24 10 pf r32 at9 ap45 1 3 pat10 p1 l1 a b 180 nh c9 select r2 562 c1 1000 pf dps1 c31 0.1 uf l3 1 uh c10 1000 pf c15 100 pf ap9 r13 1k r3 3.92k c18 33 pf ap10 c19 33 pf c2 1.5 pf r17 51.1 at10 13 pat10 p2 r4 3.92k ap42 dp33 dp34 at1 c3 5.6 pf l6 150 nh c5 5.6 pf r10 pat10 c27 5.6 pf l10 180 nh r9 1.21k dps1 r26 3.92k p3 13 at2 c7 8.2 pf l7 c6 5.6 pf pat10 c28 select l11 150 nh dps1 r25 3.92k p5 13 150 nh r11 4.32k r18 c4 1000 pf c11 1000 pf a b a b a a b b r8 3.92k r7 3.92k r5 3.92k r6 3.92k p4 port 1 port 2 sum port at3 u2 lrps211 pat10 pat10 1 1 1 r24 1 r23 1 6 4 3 3 3 1 1 c34 33 pf c20 33 pf c35 33 pf c36 33 pf a b ap46 ap44 ap41 ap40 ap38 ap12 dp26 dut48 dut45 dut46 dut47 dut44 dut41 dut43 dut42 dut40 dut39 dut38 dut37 dut36 dut35 dut34 dut33 dut32 dut31 dut30 dut29 dut28 dut27 dut26 dut25 n/c lblout rxmxgnd gnd gnd gnd lblin hblin vcc gnd strong n/c n/c x2on gnd lbbps gnd lbtnk hbtnk gnd hbbps vcc txon vcc r28 3.92k ap43 l12 4.7 nh 332 c8 10 pf r29 3.92k r31 3.92k ap47 ap16 at7 c37 100 pf c38 1000 pf dps1 c30 1.5 pf c22 33 pf l9 8.2 nh a b r22 51.1 pat6 13 p8 j292 j13 j283 r30 3.92k ap16 at8 c29 2.2 pf c21 33 pf l8 8.2 nh a b r19 51.1 pat6 13 p6 j263 c17 100 pf c14 1000 pf l5 ba 1 uh c33 0.1 uf dps1 j282 j252 dp31 dp23 j262 ap14 r16 1 at6 3.92k p7 port 2 port 1 sum port at5 u1 lrps211 pat6 pat3 r21 51.1 6 3 4 3 3 1 1 j244 ap36 r15 c26 10 pf r20 51.1 c25 10 pf j225 ap39 r14 3.92k r12 1 j212 ap11 c16 100 pf c12 1000 pf l4 ba 1 uh c32 0.1 uf j1004 dps1hf j1002 dps1lf j1003 dps1ls j1005 dps1hs j234 dp19 c13 1000 pf image reject mixer 1 1 1 do not assemble SA1921 figure 3. SA1921 dual-band test circuit
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 12 sr01755 5 pf 5 pf figure 4. SA1921 dual-band application circuit note: gsm and satellite frequencies
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 13 performance characteristics v cc = +3.75 v, freq rf = 1550 mhz, freq lo = 1713 mhz, p loin = 3 dbm, t a = +25 c; unless otherwise stated. sr01734 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 3.60 3.65 3.70 3.75 3.80 3.85 3.90 +85 c +25 c 40 c v cc (v) i cc (ma) figure 5. low band receive normal i cc sr01735 25.00 30.00 35.00 40.00 45.00 50.00 3.60 3.65 3.70 3.75 3.80 3.85 3.90 v cc (v) i cc (ma) +85 c +25 c 40 c figure 6. high band receive normal i cc sr01750 10 12 14 16 18 20 22 24 26 28 30 150 155 160 165 170 175 180 185 if frequency (mhz) gain (db) figure 7. high band gain vs. if frequency sr01751 20 25 30 35 40 45 150 155 160 165 170 175 180 185 if frequency (mhz) rejection (db) figure 8. high band image rejection vs. if frequency sr01752 13.5 13 12.5 12 11.5 11 10.5 10 9.5 9 8.5 150 155 160 165 170 175 180 185 if frequency (mhz) ip3 (dbm) figure 9. high band ip3 vs. if frequency sr01753 8 9 10 11 12 13 14 15 16 17 18 150 155 160 165 170 175 180 185 if frequency (mhz) ip2 (dbm) figure 10. high band ip2 vs. if frequency
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 14 sr01754 0 1 2 3 4 5 6 150 155 160 165 170 175 180 185 if frequency (mhz) noise figure (dbm) figure 11. high band nf vs. if frequency +25 c sr01736 14 15 16 17 18 19 20 21 22 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) gain (db) 40 c +85 c figure 12. lb lna gain vs. frequency +85 c sr01737 12 11 10 9 8 7 6 5 4 3 2 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) ip3 (dbm) +25 c 40 c figure 13. lb lna ip3 vs. frequency 40 c +25 c sr01738 0 0.5 1 1.5 2 2.5 3 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) noise figure (db) +85 c figure 14. lb lna noise figure vs. frequency +85 c 40 c +25 c sr01740 0 2 4 6 8 10 12 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) gain (db) figure 15. lb mixer gain vs. frequency 40 c +25 c sr01741 0 1 2 3 4 5 6 7 8 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) ip3 (dbm) +85 c figure 16. lb mixer ip3 vs. frequency
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 15 40 c +25 c +85 c sr01742 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) noise figure (db) figure 17. lb mixer noise figure vs. frequency 40 c +25 c +85 c sr01744 14 16 18 20 22 24 26 28 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) gain (db) figure 18. hb gain vs. frequency +85 c +25 c 40 c sr01745 18 17 16 15 14 13 12 11 10 9 8 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) ip3 (dbm) figure 19. hb ip3 vs. frequency sr01746 0 1 2 3 4 5 6 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) noise figure (db) +85 c +25 c 40 c figure 20. hb noise figure vs. frequency +25 c +85 c 40 c sr01747 20 25 30 35 40 45 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) image rejection (db) figure 21. hb image rejection vs. frequency +25 c +85 c 40 c sr01748 6 8 10 12 14 16 18 20 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) ip2 (dbm) figure 22. hb ip2 vs. frequency
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 16 +25 c 40 c sr01739 35 33 31 29 27 25 23 21 19 17 15 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) 1 db comp (dbm) +85 c figure 23. lb lna 1 db compression vs. frequency 40 c +25 c +85 c sr01743 20.00 19.00 18.00 17.00 16.00 15.00 14.00 13.00 12.00 11.00 10.00 860 870 880 890 900 910 920 930 940 950 960 frequency (mhz) 1 db comp (dbm) figure 24. lb mixer 1 db compression vs. frequency +85 c +25 c 40 c sr01749 40 38 36 34 32 30 28 26 24 22 20 1500 1510 1520 1530 1540 1550 1560 1570 1580 1590 1600 frequency (mhz) 1 db comp (dbm) figure 25. hb 1 db compression vs. frequency
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 17 s-parameters 1: 56.906 w 165.14 w 200mhz 2: 32.531 w 80.145 w 400mhz 3: 27.213 w 50.76 w 600mhz 4: 22.594 w 28.63 w 6.1759pf 900.125mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01632 figure 26. typical s 11 of the low band lna at 3.75 v for the low band receive normal mode 1: 9.2256u 170.16 200mhz 2: 8.1698u 142.74 400mhz 3: 6.7943u 124.27 600mhz 4: 5.2793u 106.87 900mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01643 figure 27. typical s 21 of the low band lna @ 3.75v for the low band receive normal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 18 2: 7.0159mu 75.611 400mhz 3: 7.8297mu 90.185 600mhz 4: 14.215mu 120.84 900mhz start: 100mhz stop: 1.35ghz 4 2 3 sr01644 figure 28. typical s 12 of the low band lna @ 3.75v for the low band receive normal mode 1 1: 35.5 w 294.66 w 200mhz 2: 351.72 w 537.09 w 400mhz 3: 77.625 w 220.38 w 600mhz 4: 30.91 w 120.37 w 1.4692pf 900mhz start: 100mhz stop: 1.35ghz 2 3 4 sr01633 figure 29. typical s 22 of the low band lna @ 3.75v for the low band receive normal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 19 1: 133.16 w 326.61 w 200mhz 2: 74.875 w 193.17 w 400mhz 3: 46.625 w 135.03 w 600mhz 4: 25.117 w 83.656 w 2.1107pf 901.375mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01634 figure 30. typical s 11 of low band lna @ 3.75v for receive strong signal mode 1: 82.778mu 56.472 200mhz 2: 101.74mu 30.696 400mhz 3: 106.02mu 18.799 600mhz 4: 97.527mu 992.89m 901.375mhz start: 100mhz stop: 1.35ghz 1 2 4 3 sr01645 figure 31. typical s 21 of the low band lna @ 3.75v for receive strong signal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 20 1: 82.482mu 48.834 200mhz 2: 101.97mu 15.44 400mhz 3: 105.45mu 4.4673 600mhz 4: 101.04mu 32.816 901.375mhz start: 100mhz stop: 1.35ghz 1 3 4 2 sr01646 figure 32. typical s 12 for the low band lna @ 3.75v for the receive strong signal mode 1: 65.453 w 303.47 w 200mhz 2: 381.59 w 432.3 w 400mhz 3: 74.375 w 206.25 w 600mhz 4: 28.723 w 108.71 w 1.6267pf 900mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01635 figure 33. typical s 22 for the low band lna @ 3.75v for the strong receive signal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 21 1: 102.26 w 217.14 w 200mhz 2: 24.902 w 100.07 w 400mhz 3: 20.596 w 48.596 w 600mhz 4: 20.036 w 18.022 w 9.8121pf 900mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01636 figure 34. typical s 11 for the low band mixer @ 3.75v for the receive normal mode 1: 15.326 w 41.15 w 200mhz 2: 12.527 w 7.6484 w 400mhz 3: 19.854 w 11.1 w 600mhz 4: 27.865 w 9.7334 w 18.166pf 900.125mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01637 figure 35. typical s 11 for the low band lo @ 3.75v for the low band receive normal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 22 1: 70.324 w 120.49 w 200mhz 2: 45.121 w 61.621 w 400mhz 3: 39.195 w 39.092 w 600mhz 4: 33.025 w 24.061 w 7.3497pf 900mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01638 figure 36. typical s 11 for the low band lna @ 3.75v for the low band transmit (analog) mode 1: 16.617u 161.94 200mhz 2: 12.974u 134.43 400mhz 3: 10.255u 118.75 600mhz 4: 7.3947u 101.63 900mhz start: 100mhz stop: 1.35ghz 1 3 4 2 sr01647 figure 37. typical s 21 of the low band lna @ 3.75v for the low band transmit (analog) mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 23 1 1: 4.6161mu 97.782 200mhz 2: 6.5206mu 88.02 400mhz 3: 9.1807mu 105.05 600mhz 4: 15.58mu 119.06 900mhz start: 100mhz stop: 1.35ghz 3 4 2 sr01648 figure 38. typical s 12 for the low band lna @ 3.75v for the low band transmit (analog) mode 1: 67.703 w 295.39 w 200mhz 2: 436.03 w 336.16 w 400mhz 3: 105.43 w 216.6 w 600mhz 4: 37.477 w 123.19 w 1.4355pf 900mhz start: 100mhz stop: 1.35ghz 1 2 3 4 sr01639 figure 39. typical s 22 for the low band lna @ 3.75v for the low band transmit (analog) mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 24 1: 13.76 w 15.057 w 1.55ghz 2: 10.422 w 5.5498 w 1.85ghz 3: 11.58 w 3.0508 w 1.95ghz 4: 12.092 w 616.21m w 125.99pf 2.05ghz start: 1.40ghz stop: 2.65ghz 1 2 3 4 sr01640 figure 40. typical s 11 for the high band lna @ 3.75v for the high band receive normal mode 1: 12.135 w 53.891 w 1.55ghz 2: 9.3379 w 38.457 w 1.85ghz 3: 8.75 w 34.238 w 1.95ghz 4: 8.7695 w 31.25 w 2.4844pf 2.05ghz start: 1.40ghz stop: 2.65ghz 1 2 3 4 sr01641 figure 41. typical s 11 for the high band lna @ 3.75v for the high band receive strong signal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 25 1: 20.574 w 38.402 w 1.55ghz 2: 18.104 w 22.765 w 1.85ghz 3: 24.446 w 21.71 w 1.95ghz 4: 20.975 w 20.711 w 3.7486pf 2.05ghz start: 1.40ghz stop: 2.65ghz 1 2 3 4 sr01642 figure 42. typical s 11 of the high band lo @ 3.75v for the high band receive normal mode
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 26 table 2. typical s-parameters of low band lna at v cc = +3.75v, lb receive normal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 27 table 3. typical s-parameters of low band lna at v cc = +3.75v, lb strong signal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 28 table 4. typical s-parameters of low band lna at v cc = +3.75v, lb transmit on (analog) mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 29 table 5. typical s-parameters of low band mixer input at v cc = +3.75v, lb receive normal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 30 table 6. typical s-parameters of low band lo input at v cc = +3.75v, lb receive normal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 31 table 7. typical s-parameters of hb lna input at v cc = +3.75v, hb receive normal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 32 table 8. typical s-parameters of hb lna input at v cc = +3.75v, hb strong signal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 33 table 9. typical s-parameters of hb lo input at v cc = +3.75v, hb receive normal mode freq (mhz) |s11| (u) philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 34 lqfp48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm sot313-2
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 35 notes
philips semiconductors product specification SA1921 satellite and cellular dual-band rf front-end 1999 mar 02 36 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 ? copyright philips electronics north america corporation 1999 all rights reserved. printed in u.s.a. date of release: 0399 document order number: 9397 750 05353
data sheet status objective specification preliminary specification product specification product status development qualification production definition [1] this data sheet contains the design target or goal specifications for product development. specification may change in any manner without notice. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. data sheet status [1] please consult the most recently issued datasheet before initiating or completing a design.

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